1????????aea1??e?t1??? 1???????e??aa 18 o???a?1R3?yo?a?a tel:0758-2865088 2865091 fax:0758-2849749 page 0 of *2005 ?? 2 ?* all rights reserved 3 general purpose transistors y??1 pnp silicon (fht1037) features ?? excellent h fe linearity h fe ??e??e???o? oh fe (0.1ma)/h fe (2ma)=0.95(typ.) low noise ??? :nf=1db(typ.),10db(max.). complementary to fht2412 ? fht2412 ?21 maximum ratings (t a =25 ?? ) ?????? characteristic ?e?2?y symbol ?o? rating ???? unit ??? collector-base voltage ????- ?????1 v cbo -60 vdc collector-emitter voltage ????- l?????1 v ceo -50 vdc emitter-base voltage l???- ?????1 v ebo -6.0 vdc collector current ?acontinuous ?????- ?e? ic -150 madc base current ???? i b -30 madc collector power dissipation ????o?1|a p c 200 mw junction temperature ??a t j 150 ?? storage temperature range ??a? t stg -55 ??150 ?? device marking ? h fe (1)fht1037q=fq(120 ?? 270),fht1037r=fr(180?? 390), FHT1037S=fs(270?? 560) electrical characteristics ??e? (t a =25 ?? unless otherwise noted ??t?a?????a??a 25 ?? ) characteristic ?e?2?y symbol ?o? test condition 2a???t min ? e? ? typ ? e max ? ? ? uni t ? ?? collector cutoff current ???????1? i cbo v cb =-60v,i e =0 ? ? -0.1 | a emitter cutoff current l??????1? i ebo v eb =-6v,i c =0 ? ? -0.1 | a collector-base breakdown voltage ????- ????????1 v (br)cbo i c =-50| a -60 ? ? v collector-emitter breakdown voltage ????- l????????1 v (br)ceo i c =-1.0ma -50 ? ? v emitter-base breakdown voltage l???- ????????1 v (br)ebo i e =-50| a -6 ? ? v dc current gain ?|???? h fe v ce =-6v,i c =-1ma 120 ? 560 ?a collector-emitter saturation voltage ????- l???o?1? v ce(sat) i c =-50ma,i b =-5ma ? ? -0.5 v transition frequency ???a f t v ce =-12v,i e =2ma, f=30mhz ? 140 ? mhz collector output capacitance ?3??y c ob v cb =-12v,i e =0, f=1mhz ? 4.0 5.0 pf
1????????aea1??e?t1??? 1???????e??aa 18 o???a?1R3?yo?a?a tel:0758-2865088 2865091 fax:0758-2849749 page 1 of *2005 ?? 2 ? * all rights reserved 3 sot - 23 a?ae?3??? sot - 23 dimension ?
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